Wafer scale integration semiconductor device having improved chi

Details Wafer scale integration semiconductor device having improved chi Wafer scale integration semiconductor device having improved chi

1988-01-15

1989-08-08

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307441, 3072961, 3072963, 3074821, 3073032, 34082584, 365 96, H04Q 900, G11C 1700, H03K 1708, H03K 19007

Patent

active

048556130

ABSTRACT:
A plurality of RAM chips, a V.sub.CC power supply terminal and a V.sub.SS power supply terminal are all formed on one wafer. Each of the RAM chips comprises an MOS circuit comprising a V.sub.CC power supply line and a V.sub.SS power supply line, a power supply terminal and a ground terminal. The ground terminal is connected to the V.sub.SS power supply line through an N channel MOS transistor, and the power supply terminal is connected to the V.sub.CC power supply line. The MOS transistor has a gate connected to a power supply terminal through a fuse element. The power supply terminals and the ground terminals in the plurality of RAM chips are connected to the V.sub.CC power supply terminal and the V.sub.SS power supply terminal, respectively, by aluminum interconnections. When a power-supply voltage is applied between the V.sub.CC power supply terminal and the V.sub.SS power supply terminal, the MOS transistor in each of the RAM chips is turned on, so that the power-supply voltage is supplied to the MOS circuit in each of the RAM chips. When a fuse element in any of the RAM chips is disconnected, the MOS transistor in the RAM chip is turned off, so that the power-supply voltage is not supplied to the MOS circuit in the RAM chip and the power-supply voltage is supplied to the MOS circuits in the other RAM chips.

REFERENCES:
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patent: 4329685 (1982-05-01), Mahon et al.
patent: 4605872 (1986-08-01), Rung
patent: 4613959 (1986-09-01), Jiang
patent: 4621346 (1986-11-01), McAdams
patent: 4686384 (1987-08-01), Harvey et al.
patent: 4694432 (1987-09-01), Miyatake et al.
patent: 4701636 (1987-10-01), Millhollan et al.
ISCC 79, "A 1Mb Full Wafer MOS RAM", by Yutaka Egawa et al., Wednesday, Feb. 14, 1979, pp. 18-19.
IEEE J. of Sol. St. Circuits, "A 1-Mbit Full-Wafer MOS RAM", vol. SC-15, No. 4, Aug. 1980, pp. 677-686.

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