Wafer scale integration packaging and method of making and...

Details Wafer scale integration packaging and method of making and... Wafer scale integration packaging and method of making and...

2006-07-18

2006-07-18

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Encapsulating

C438S108000, C438S907000

Reexamination Certificate

active

07078272

ABSTRACT:
A method of making a microelectronic device comprising: making a device B comprising providing a structure having a first bond pad, depositing a first electrically conductive material having a first reflow temperature over the first bond pad, and depositing a second electrically conductive material having a second reflow temperature over the first electrically conductive material, and wherein the second reflow temperature is less than the first reflow temperature, and heating the device to a temperature sufficient to reflow the second electrically conductive material but not the first electrically conductive material so that the second electrically conductive material encapsulates the first electrically conductive material to provide a first bump for making electrical connection to device B.

REFERENCES:
patent: 6536653 (2003-03-01), Wang et al.
patent: 6857557 (2005-02-01), Hua

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