Radiant energy – Irradiation of objects or material – Ion or electron beam irradiation
Patent
1989-02-28
1990-05-29
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Ion or electron beam irradiation
250397, 250398, H01J 3708
Patent
active
049298402
ABSTRACT:
A method and apparatus for controlling the ion dose implanted in a semiconductor wafer. The wafer is received on a platen which is rotated in discrete steps by a stepper motor. With the wafer in an initial stationary position the dose accumulated by the wafer is measured. When the incremental measured dose equals the total dose to be implanted divided by a predetermined number of steps over which the implant is to be carried out, the motor is stepped one increment. This process is then repeated until the total desired dose is attained.
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Improved VLSI Device Yields Through Control of Implant Angle by R. E. Kaim and J. F. M. Westendorp.
Analysis of Uniformity of Trench Side-Wall Doping by SIMS by T. Takemoto, Y. Hirofuji, H. Iwasaki, N. Matsuo.
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New End Station for Rotation/Wide-Angle Ion Implanter Technique and its Application to VLSI Devices, Nissin Electric Company, Ltd.
Dykstra Jerald P.
Ray Andrew M.
Anderson Bruce C.
Eaton Corporation
Sajovec F. M.
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