Wafer recovering method, wafer, and fabrication method

Details Wafer recovering method, wafer, and fabrication method Wafer recovering method, wafer, and fabrication method

2008-03-18

2008-03-18

Tran, Binh X (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C216S083000, C216S095000, C216S096000, C216S100000

Reexamination Certificate

active

10943081

ABSTRACT:
In order to use an etching solution of less complicated composition for recovering used wafers, embodiments of the present invention provide a recovering method, and also provide a kind of wafer, which is used as a process control wafer or dummy wafer, and fabrication methods. In one embodiment, a wafer-recovering method comprises providing a first wafer, wherein the first wafer has a base, a first conductive layer on the base, and a second conductive layer on the first conductive layer. The method further comprises removing the first and second conductive layers with an acidic solution to obtain a second wafer; and washing the second wafer with a liquid. The second conductive layer is formed on the first conductive layer in a deposition process, and the first conductive layer is more easily removed by the acidic solution than the second conductive layer.

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S. Wolf and R.N. Tauber, (Silicon Processing for the VLSI Era, vol. 1- Process Technology, Lattice Press, 1986, pp. 535-536)□□.

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