Wafer processing method without occurrence of damage to...

Details Wafer processing method without occurrence of damage to... Wafer processing method without occurrence of damage to...

2011-08-09

2011-08-09

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S113000, C438S114000, C438S462000, C257SE21599, C257SE21600

Reexamination Certificate

active

07994025

ABSTRACT:
A wafer processing method of processing a wafer having on a front surface a device area where a plurality of devices are formed by being sectioned by predetermined dividing lines, and an outer circumferential redundant area surrounding the device area, includes the steps of: sticking a protection tape to the front surface of the wafer; holding a protection tape side of the wafer by a rotatable chuck table, positioning a cutting blade on a rear surface of the wafer, and rotating the chuck table to cut a boundary portion between the device area and the outer circumferential redundant area to form a separation groove; grinding only the rear surface of the wafer corresponding to the device area to form a circular recessed portion to leave the ring-like outer circumferential redundant area as a ring-like reinforcing portion, the wafer being such that the device area and the ring-like outer circumferential redundant area are united by the protection tape; and conveying the wafer supported by the ring-like reinforcing portion via the protection tape.

REFERENCES:
patent: 2007/0007247 (2007-01-01), Sekiya
patent: 2007-019461 (2007-01-01), None

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