Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2011-01-04
2011-01-04
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
Reexamination Certificate
active
07863160
ABSTRACT:
A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film laminated on the front surface of a substrate, along streets for sectioning the devices, comprising a first trip blocking groove forming step for activating a first laser beam application means to form a blocking groove for dividing the laminate along a street of the wafer while moving the chuck table in a first direction in the processing-feed direction; a second trip blocking groove and dividing groove forming step for activating the first laser beam application means to form a blocking groove for dividing the laminate along a street and also to form a dividing groove along the blocking groove formed by the first trip blocking groove step while moving the chuck table in a second direction in the processing-feed direction.
REFERENCES:
patent: 7772092 (2010-08-01), Iizuka et al.
patent: 2005-142389 (2005-06-01), None
Brewster William M.
Disco Corporation
Smith , Gambrell & Russell, LLP
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