Abrading – Abrading process – With critical nonabrading work treating
Reexamination Certificate
2009-01-27
2011-11-08
Nguyen, George (Department: 3723)
Abrading
Abrading process
With critical nonabrading work treating
C451S058000, C451S029000, C451S388000, C451S398000
Reexamination Certificate
active
08052505
ABSTRACT:
A wafer processing method for processing a wafer (20) having bumps (B) formed on a front surface (21) comprises the steps of: holding on a table (51), a bump region-conforming member (40) that has an outer shape conforming only to a bump region (25) where said bumps are formed in the wafer; forming a resin layer (29) by applying resin around the bump region-conforming member up to a thickness equal to or greater than that of the bump region-conforming member; grinding the bump region-conforming member along with the resin layer to a predetermined thickness; removing the bump region-conforming member from the table to form a concave part (45) in the resin layer; applying a film (11) on the front surface of the wafer; and disposing the wafer in the concave part of the resin layer and holding the wafer on the table so that a back surface (22) of said wafer faces upward. After that, the back surface of the wafer can also be ground. As a result, a change in the size of the bumps can be easily accommodated without creating clearance.
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Singapore Search Report dated Apr. 8, 2009, for corresponding Singapore application 2008095093, noting listed references in this IDS.
Akahori Hajime
Kanazawa Masaki
Christie Parker & Hale, LLP.
Nguyen George
Tokyo Seimitsu Co. Ltd.
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