Wafer processing method for improving gettering capabilities...

Details Wafer processing method for improving gettering capabilities... Wafer processing method for improving gettering capabilities...

2011-01-18

2011-01-18

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C257SE27112

Reexamination Certificate

active

07871904

ABSTRACT:
A wafer processing method for improving gettering capabilities of wafers made therefrom is presented. The method includes the steps of preparing, annealing and ion-implanting. The preparing step involves preparing the wafer from a silicon ingot. The annealing step involves forming first gettering sites in both sides of the wafer by annealing the wafer. The ion-implanting step involves forming second gettering sites in a back side of the wafer in which the first gettering sites are already formed.

REFERENCES:
patent: 5738942 (1998-04-01), Kubota et al.
patent: 7294561 (2007-11-01), Erokhin et al.
patent: 1020030059492 (2003-07-01), None

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