Wafer processing method and equipment therefor

Details Wafer processing method and equipment therefor Wafer processing method and equipment therefor

1996-08-14

1999-03-16

Green, Anthony

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

216 52, 216 53, 216 89, 156345, 438690, 438691, 438692, 438693, 438906, 438928, 438959, 438974, B24B 100, H01L 21304

Patent

active

058825398

ABSTRACT:
A wafer processing method which can polish the chamfered portion of a wafer quickly, is disclosed. The processing method comprises the steps of: chamfering a peripheral portion of a wafer obtained by slicing an ingot, by grinding; lapping the wafer; etching the chamfered or lapped wafer; thereafter honing the entirety of the chamfered peripheral portion of the wafer by using a grinding stone while applying a predetermined load to the grinding stone; and thereafter polishing the entirety of the chamfered peripheral portion and the front and rear surfaces of the wafer.

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patent: 4581103 (1986-04-01), Levine et al.
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patent: 5316620 (1994-05-01), Hasegawa et al.
patent: 5447890 (1995-09-01), Kato et al.
patent: 5494862 (1996-02-01), Kato et al.
"Semiconductor Material Basic Engineering", pubished by Nikkan Kogyo Newspaper Publishing Company, pp. 143-147. (1994).

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