Wafer processing method

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having a perfecting coating

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S113000

Reexamination Certificate

active

11262770

ABSTRACT:
To divide into individual devices efficiently in dicing a wafer without causing quality of the devices to lower, a wafer processing method includes steps of coating a rear surface of the wafer with a resist film, exposing and sensitizing portions of the resist film other than regions corresponding to the streets; and supplying a silylation agent onto a surface of the resist film and silylating the resist film in a sensitized region. In an etching unit, an oxygen- or chlorine-containing gas is plasmatized and supplied to a rear surface of the wafer coated with a silylated resist film, and the resist film in an unsilylated regions corresponding to the streets is ashed and removed. A stable fluoride gas is plasmatized and supplied to the rear surface of the wafer, and the resist film in the regions corresponding to the streets is etch-removed to divide the wafer W into individual devices.

REFERENCES:
patent: 4871651 (1989-10-01), McCune et al.
patent: 5368783 (1994-11-01), Kobayashi et al.
patent: 5858106 (1999-01-01), Ohmi et al.
patent: 2006/0105273 (2006-05-01), Fukuda et al.
patent: 2004-228133 (2004-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Wafer processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer processing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3839944

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.