Wafer processing method

Details Wafer processing method Wafer processing method

2007-10-30

2007-10-30

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having a perfecting coating

C438S113000

Reexamination Certificate

active

11262770

ABSTRACT:
To divide into individual devices efficiently in dicing a wafer without causing quality of the devices to lower, a wafer processing method includes steps of coating a rear surface of the wafer with a resist film, exposing and sensitizing portions of the resist film other than regions corresponding to the streets; and supplying a silylation agent onto a surface of the resist film and silylating the resist film in a sensitized region. In an etching unit, an oxygen- or chlorine-containing gas is plasmatized and supplied to a rear surface of the wafer coated with a silylated resist film, and the resist film in an unsilylated regions corresponding to the streets is ashed and removed. A stable fluoride gas is plasmatized and supplied to the rear surface of the wafer, and the resist film in the regions corresponding to the streets is etch-removed to divide the wafer W into individual devices.

REFERENCES:
patent: 4871651 (1989-10-01), McCune et al.
patent: 5368783 (1994-11-01), Kobayashi et al.
patent: 5858106 (1999-01-01), Ohmi et al.
patent: 2006/0105273 (2006-05-01), Fukuda et al.
patent: 2004-228133 (2004-08-01), None

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