Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2007-10-18
2009-11-03
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S474000, C438S799000, C257SE21317, C257SE21318
Reexamination Certificate
active
07611970
ABSTRACT:
A water processing method for providing a gettering sink effect to a wafer having a plurality of streets which are formed in a lattice pattern on the front surface of a substrate and devices which are formed in a plurality of areas sectioned by the plurality of streets, comprising the steps of removing distortion produced on the rear surface of the substrate of the wafer whose rear surface of the substrate has been ground to a predetermined thickness; forming a gettering sink effect layer by applying a laser beam of a wavelength having permeability for the substrate of the wafer which has undergone the distortion removing step, with its focal point set to the inside of the substrate to form a deteriorated layer in the inside of the substrate; and dividing the wafer which has undergone the gettering sink effect layer forming step, into individual chips along the streets.
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Disco Corporation
Everhart Caridad M
Smith , Gambrell & Russell, LLP
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