Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2011-03-29
2011-03-29
Vu, David (Department: 2829)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
C438S460000
Reexamination Certificate
active
07915142
ABSTRACT:
A wafer processing method for dividing a wafer into individual devices along streets. The wafer processing method includes the steps of forming a division groove on the front side of the wafer along each street, attaching the front side of the wafer to the front side of a rigid plate having a plurality of grooves by using an adhesive resin, applying ultraviolet radiation to the adhesive resin to thereby increase the holding force of the adhesive resin, grinding the back side of the wafer to expose the division grooves to the back side of the wafer, attaching an adhesive tape to the back side of the wafer, immersing the wafer and the rigid plate in hot water to swell the adhesive resin, thereby decreasing the holding force of the adhesive resin, and removing the rigid plate from the front side of the wafer.
REFERENCES:
patent: 10-305420 (1998-11-01), None
Disco Corporation
Greer Burns & Crain Ltd.
Pathak Shantanu C
Vu David
LandOfFree
Wafer processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Wafer processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer processing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2709898