Wafer probe for measuring plasma and surface characteristics...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With measuring – sensing – detection or process control means

Reexamination Certificate

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C156S345240, C156S345250, C156S345260, C118S712000, C118S713000, C118S714000, C118S715000, C438S007000, C438S009000, C438S010000, C438S011000, C438S016000, C438S018000, C216S059000, C216S067000, C315S111010, C204S298030, C204S192130

Reexamination Certificate

active

10951162

ABSTRACT:
There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

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