Wafer polishing pad centering apparatus

Abrading – Frame or mount – Rotary tool supporter

Reexamination Certificate

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Details

C451S290000

Reexamination Certificate

active

06435957

ABSTRACT:

COPYRIGHT NOTICE
Contained herein is material that is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction of the patent disclosure by any person as it appears in the Patent and Trademark Office patent files or records, but otherwise reserves all rights to the copyright whatsoever.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates generally to the field of integrated circuit fabrication. More particularly, the invention relates to the installation and centering of a polishing pad on a Chemical Mechanical Process (CMP) polishing machine using a centering apparatus.
2. Description of the Related Art
After circuitry has been burned into a silicon wafer containing a number of potential integrated circuit chips, an oxide layer is applied to the surface of the wafer. The oxide layer protects and insulates the circuitry. “Holes” are etched in the oxide layer to circuit connection points and metal interconnects are deposited thereon, and metal traces are formed of the oxide layer surface. A number of interconnect layers are necessary to make electrical connections with all of the circuitry on the wafer. Accordingly, a new oxide layer is deposited on top of the prior layer to electrically isolate the interconnects and traces. Because the topography of the surface on which each of the successive oxide layers is deposited is not planar, the resulting oxide surface is also not planar. Planarity is necessary, however, so that the next layer of metal interconnects may be deposited on the chip. To achieve the necessary planarity, a chemical mechanical process (CMP) is typically utilized.
CMP is an abrasive process using chemical slurries and a circular sanding action to polish the surface of the oxide layer smooth. Typical wafer polishers, such as the MirraMesa™ by Applied Materials, Inc., have multiple rotating platens and multiple heads to hold silicon wafers, facilitating the polishing of more than one wafer simultaneously.
Prior art
FIGS. 1
a
and
1
b
illustrate two views of a portion of a CMP polishing machine. A rotating platen
100
is secured to the polisher base. A polishing pad
110
, such as IC1000 pads by Rodell, Incorporated of Newark, Del. made of a polymeric material is secured to the top of the platen
100
with a pressure-sensitive adhesive. The polishing pad typically has a diameter greater than the platen and accordingly, the edge of the polishing pad
110
extends beyond the edge of the platen
100
. The polishing pad comprises a series of circumferential ridges and grooves
150
, which carry the abrasive slurry towards the wafer
125
and carry away oxide removed from the wafer
125
. A conditioning head
140
is provided that typically comprises an abrasive-encrusted (e.g. diamond, or silicon oxide) pad, which acts to roughen the surface of the polishing pad
110
. The slurry, generally comprised of Silicon Oxide particles, is introduced to polishing pad
110
through a series of nozzles
135
located on a slurry deposition head
130
. The wafer
125
is orientated face down and is secured to a wafer head
120
, which moves vertically to bring the wafer
125
in contact with the polishing pad
110
.


REFERENCES:
patent: 6129611 (2000-10-01), Yamaguchi
patent: 41107 (1911-07-01), None
patent: 272112 (1914-03-01), None
patent: 14139 (1908-01-01), None

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