Wafer polishing method

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S113000, C438S690000, C216S020000

Reexamination Certificate

active

08053367

ABSTRACT:
A wafer polishing method is provided. First, a wafer, having a first surface, a second surface, and a plurality of opening portions depressed on the first surface, is provided. A plastic adhesive is filled in the opening portions and cured later. A polishing step is performed to thin the thickness of the wafer. Therefore, the yield of the wafer in the polishing process can be improved by the protection of the plastic adhesive.

REFERENCES:
patent: 5776799 (1998-07-01), Song et al.
patent: 6703075 (2004-03-01), Lin et al.
patent: 7217640 (2007-05-01), Kurosawa et al.
patent: 2005/0009366 (2005-01-01), Moore

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Wafer polishing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer polishing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer polishing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4279102

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.