Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-09-22
2011-11-08
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S113000, C438S690000, C216S020000
Reexamination Certificate
active
08053367
ABSTRACT:
A wafer polishing method is provided. First, a wafer, having a first surface, a second surface, and a plurality of opening portions depressed on the first surface, is provided. A plastic adhesive is filled in the opening portions and cured later. A polishing step is performed to thin the thickness of the wafer. Therefore, the yield of the wafer in the polishing process can be improved by the protection of the plastic adhesive.
REFERENCES:
patent: 5776799 (1998-07-01), Song et al.
patent: 6703075 (2004-03-01), Lin et al.
patent: 7217640 (2007-05-01), Kurosawa et al.
patent: 2005/0009366 (2005-01-01), Moore
Advanced Semiconductor Engineering Inc.
J.C. Patents
Vinh Lan
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