Wafer packaging process of packaging light emitting diode

Details Wafer packaging process of packaging light emitting diode Wafer packaging process of packaging light emitting diode

2006-02-14

2006-02-14

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S022000, C438S028000, C438S033000, C438S614000

Reexamination Certificate

active

06998280

ABSTRACT:
A wafer packaging process of packaging light-emitting diode is described. A first photoresist layer is coated on an uncut wafer having a plurality of pads. The first photoresist layer is etched to form a plurality of first openings until a portion of the pad within the first openings are exposed. An electroplating process is performed to fill a conductive material in the first openings to form a plurality of conductive plugs electrically connecting with the pads. A second photoresist layer is coated on a surface of the first photoresist layer. The second photoresist layer is etched to form a plurality of second openings until a portion of said conductive plugs is exposed within the second openings. The second openings are filled with a conductive resilient element. Then an electroplating process is performed. Finally, the wafer is cut to form a plurality of packaged light emitting diodes.

REFERENCES:
patent: 6538323 (2003-03-01), Sakata et al.
patent: 6593220 (2003-07-01), Yu et al.
patent: 6835960 (2004-12-01), Lin et al.
patent: 6860621 (2005-03-01), Bachl et al.
patent: 6897127 (2005-05-01), Hanaoka
patent: 2002/0013098 (2002-01-01), Triepels et al.

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