Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2009-01-12
2011-11-08
Sandvik, Benjamin (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE23019, C257SE29329
Reexamination Certificate
active
08053885
ABSTRACT:
A wafer level vertical diode package structure includes a first semiconductor layer, a second semiconductor layer, an insulative unit, a first conductive structure, and a second conductive structure. The second semiconductor layer is connected with one surface of the first semiconductor layer. The insulative unit is disposed around a lateral side of the first semiconductor layer and a lateral side of the second semiconductor layer. The first conductive structure is formed on a top surface of the first semiconductor layer and on one lateral side of the insulative layer. The second conductive structure is formed on a top surface of the second semiconductor layer and on another opposite lateral side of the insulative layer.
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Chen Jack
Hsiao Sung-Yi
Wang Bily
Harvatek Corporation
Rosenberg , Klein & Lee
Sandvik Benjamin
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