Wafer-level thick film standing-wave clocking

Details Wafer-level thick film standing-wave clocking Wafer-level thick film standing-wave clocking

2005-08-09

2005-08-09

Wilson, Christian (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S759000

Reexamination Certificate

active

06927496

ABSTRACT:
An embodiment of the present invention is a technique to distribute clock. At least a metal layer is formed to have a standing-wave structure to distribute a clock signal to receiver end points from a clock source such that the receiver end points are substantially electrically equivalent with respect to the clock source. The metal layer is embedded in dielectric layers made of thick film using a wafer-level thick film (WLTF) process.

REFERENCES:
patent: 5387885 (1995-02-01), Chi
patent: 5640112 (1997-06-01), Goto et al.
patent: 6037822 (2000-03-01), Rao et al.
patent: 6522186 (2003-02-01), O'Mahony et al.
patent: 6586276 (2003-07-01), Towle et al.
patent: 6593793 (2003-07-01), Braunisch et al.
patent: 6720814 (2004-04-01), Braunisch et al.
Vernon L. Chi, Salphasic Distribution of Clock Signals for Synchronous Systems, IEEE Transactions on Computers, vol. 43, No. 5, May 1994.

Affiliated with

Also associated with

Rating

Wafer-level thick film standing-wave clocking does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer-level thick film standing-wave clocking, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer-level thick film standing-wave clocking will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3474454