Wafer level test structure for detecting multiple domains and ma

Details Wafer level test structure for detecting multiple domains and ma Wafer level test structure for detecting multiple domains and ma

1995-05-09

1996-05-07

Strecker, Gerard R.

Electricity: measuring and testing

Magnetic

With means to create magnetic field to test material

29593, 324235, 324252, 324537, G01R 3312, G01N 2782, H01L 4308, G11B 539

Patent

active

055149537

ABSTRACT:
A wafer level test structure and method detects multiple magnetic domains and magnetic domain instability in a test magnetic element. The apparatus comprises a first MR sensor designed to be held in a single magnetic domain by shape anisotropy and a second MR sensor having a permanent magnet to hold the element in a single magnetic domain. A circuit connects the first and second MR sensors to detect differences between the changes in resistance between the first and second sensors in the presence of a magnetic field or differences in resistance after the application and release of a magnetic field. The circuit is preferably a balance circuit in which imbalance in the presence of a magnetic field indicates the presence of multiple magnetic domains in at least one of the test sensors. Magnetic domain stability may be tested by applying an external field to disrupt the existing single domain state of the test sensors, and thereafter detecting differences in resistance of the sensors during reversal of the magnetic field.

REFERENCES:
patent: 5247276 (1993-09-01), Pant et al.
patent: 5260653 (1993-11-01), Smith et al.

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