Wafer level stacked package

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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Details

C257SE23061, C257SE23125, C257SE23005, C257SE23008, C257SE23026, C257SE23067, C257SE23013, C257SE23105, C257SE25023, C257S686000, C257S685000, C257S723000, C257S778000, C257S737000, C257S738000, C257S698000

Reexamination Certificate

active

11128633

ABSTRACT:
Disclosed are a wafer level stacked package and its manufacturing method. As one example, in such a wafer level stacked package, a first semiconductor die is electrically connected to an upper surface of a substrate and a second semiconductor die is electrically connected to a lower surface of the substrate. That is, with respect to one substrate, semiconductor dies can be stacked on upper and lower surfaces of the substrate. Also, underfill is formed between the respective semiconductor dies and the substrate, thereby enhancing bonding forces between the respective semiconductor dies and the substrate. In addition to stacking the semiconductor dies, packages can be stacked with each other. That is, it is possible to stack a plurality of completed wafer level packages with each other in an up-and-down direction.

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