Wafer level sensing package and manufacturing process thereof

Details Wafer level sensing package and manufacturing process thereof Wafer level sensing package and manufacturing process thereof

2011-03-29

2011-03-29

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S051000, C438S055000, C438S064000, C438S614000, C257SE21575, C257SE23020, C257SE23021

Reexamination Certificate

active

07915065

ABSTRACT:
A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.

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