Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-01-24
2008-12-16
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S704000, C257S730000, C029S025350, C029S594000, C029S830000, C216S002000, C216S041000, C216S056000
Reexamination Certificate
active
07466022
ABSTRACT:
One embodiment disclosed relates to a method for sealing an active area of a non-silicon-based device on a wafer. The method includes providing a sacrificial material over at least the active area of the non-silicon-based device, depositing a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing the sacrificial material with a target atmosphere. Another embodiment disclosed relates to a non-silicon-based device sealed at the wafer level (i.e. prior to separation of the die from the wafer). The device includes an active area to be protected, a contact area, and a lithographically-formed structure sealing at least the active area and leaving at least a portion of the contact area exposed.
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Bruner Mike
Miller Gregory D.
Chambliss Alonzo
Nuttle William E.
Silicon Light Machines Corporation
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