Wafer level package structure of optical-electronic device...

Details Wafer level package structure of optical-electronic device... Wafer level package structure of optical-electronic device...

2008-01-08

2008-01-08

Zarneke, David A. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31124, C257SE31117, C257SE31113, C257S434000

Reexamination Certificate

active

07317235

ABSTRACT:
A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.

REFERENCES:
patent: 6627864 (2003-09-01), Glenn et al.
patent: 6646289 (2003-11-01), Badehi
patent: 6864116 (2005-03-01), Kim et al.
patent: 6943423 (2005-09-01), Kim
patent: 6943424 (2005-09-01), Kim
patent: 7015579 (2006-03-01), Okada et al.
patent: 2007/0069317 (2007-03-01), Liu

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