Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Reexamination Certificate
2005-01-25
2005-01-25
Zarneke, David A. (Department: 2827)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
Reexamination Certificate
active
06846725
ABSTRACT:
A method for forming wafers having through-wafer vias for wafer-level packaging of devices, the method comprising the steps of depositing metal on one of two wafers; bonding the two wafers using the metal deposited on the one of the two wafers; forming a through-wafer via in one of the two wafers; filling the through-wafer via with a conductive material; and forming a cavity in the one of the two wafers having the through-wafer via wherein the cavity is superposable over a device.
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patent: 6498422 (2002-12-01), Hori
T. Nguyen Nhu et al.: “Through-Wafer Copper Plugs Formation for 3-Dimentional ICs”, DIMES, The Netherlands, pp. 141-144.
N. T. Nguyen et al.: “Through-wafer copper electroplating for three-dimensional interconnects”, Jun. 19, 2002, J. Micromech. Microeng. 12 (2002), pp. 395-399.
Chen Yu
Kripesh Vaidyanathan
Nagarajan Ranganathan
Premachandran Chirayarikathuveedu Sankarapillai
Berkowitz Marvin C.
Institute of Microelectronics
Nath & Associates PLLC
Novick Harold L.
Zarneke David A.
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