Wafer level integration of an optical modulator and III-V photod

Details Wafer level integration of an optical modulator and III-V photod Wafer level integration of an optical modulator and III-V photod

1996-07-23

1998-07-21

Epps, Georgia Y.

Optical: systems and elements

Optical modulator

Light wave temporal modulation

359291, G02F 103

Patent

active

057841870

ABSTRACT:
A device having an optical modulation region and a photodetection region formed on a single wafer, and methods for making the device, are disclosed. In one configuration, the device consists of an off-axis nonpolar substrate that has, on one side, a region suitable for modulating an optical signal. The other side of the substrate has a region suitable for photodetection. The region suitable for modulating an optical signal includes a movable layer suspended over the substrate. As the movable layer moves under an applied voltage, the reflectivity of the modulation region changes. The photodetection region consists of a plurality of III-V layers. In a second configuration, the device consists of a III-V substrate that has a region for photodetection disposed on one surface. A region for optical modulation is disposed on the photodetection region.

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