Wafer level electro-optical semiconductor manufacture...

Details Wafer level electro-optical semiconductor manufacture... Wafer level electro-optical semiconductor manufacture...

2005-01-26

2010-02-02

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S091000, C257S432000, C257S433000, C257SE33057, C257SE27120

Reexamination Certificate

active

07655997

ABSTRACT:
A wafer-level electro-optical semiconductor fabrication mechanism and method for the same which improves upon traditional electro-optical semiconductor grain packaging methods. The present invention electrically connects semiconductor grains to the grains on a top surface of a wafer, this is done by either screen-printing or steel board-printing solder or silver paste onto the wafer. After that, the wafer is processed using the following steps: processing the devices, bonding with wire, packaging the wafer and finally cutting the wafer. Using this method raises the production yield while production times and costs are reduced. The wafer-level electro-optical semiconductor fabrication mechanism comprises: a wafer, an electro-optical semiconductor grain and conductive materials.

REFERENCES:
patent: 5864062 (1999-01-01), Nagahara et al.
patent: 6696704 (2004-02-01), Maeda et al.
patent: 2005/0077531 (2005-04-01), Kim
patent: 2006/0198162 (2006-09-01), Ishidu et al.

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