Wafer laser processing method and laser beam processing machine

Details Wafer laser processing method and laser beam processing machine Wafer laser processing method and laser beam processing machine

2007-11-19

2009-11-03

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S460000, C257SE21516, C257SE21347

Reexamination Certificate

active

07611968

ABSTRACT:
A wafer laser processing method for forming deteriorated layers in the inside of a wafer having devices which are formed in a plurality of areas sectioned by a plurality of streets formed in a lattice pattern on the front surface along the streets by applying a laser beam along the streets, comprising: a first deteriorated layer forming step for forming a first deteriorated layer along the streets near the front surface of the wafer by applying a laser beam having a wavelength of 1,064 nm from the rear surface side of the wafer along the streets with its focal spot set to a position near the front surface of the wafer; and a second deteriorated layer forming step for forming a second deteriorated layer along the streets at a position closer to the rear surface of the wafer than the first deteriorated layer by applying a laser beam having a wavelength of 1,342 nm from the rear surface side of the wafer along the streets with its focal spot set to a position closer to the rear surface than the first deteriorated layer.

REFERENCES:
patent: 2007/0253453 (2007-11-01), Essaian et al.
patent: 3408805 (2003-03-01), None

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