Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2005-02-08
2005-02-08
Nguyen, Vinh P. (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S765010
Reexamination Certificate
active
06853204
ABSTRACT:
A semiconductor defect inspection device and method for detecting defects of partially finished substrates (semiconductor wafers) for semiconductor devices is provided. The substrate surface is irradiated with a charged particle beam and a voltage contrast image is obtained while the charged voltage is controlled at a desired level, and the electric resistances of the irradiated area from the image are calculated to detect a defect and identify the type of defect. Further, the distribution of electric resistances on the whole surface of the substrate can be quickly worked out. The charged particle beam irradiation conditions are varied in order to bring the charged voltage of the area to a desired value. With this device/method, electric resistances of small portions at desired charged voltages and the corresponding electric resistances are measured in a non-contact manner to determine the type of defect. When this inspection method is applied to the PCB manufacturing process, defects can be detected and remedied at an early stage of the process. Consequently, in the semiconductor devices and other PCB related devices, the defect rate decreases and the productivity increase. Since the defect occurrence rate is reduced, the reliability of semiconductor devices is increased, and the efficiency in developing new products is improved.
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Hidetoshi Nishiyama, Mari Nozoe, Koji Aramaki, Osamu Watanabe and Yoshihiro Ikeda, “Open Contact-Failure Detection of via Holes by using Voltage Contrast”, Proceedings of SPIE Reprint, reprinted from Metrology, Inspection and Process Control for Microlithography XV, Mar. 1, 2001, vol. 4344, pp. 12-21.
Nishiyama Hidetoshi
Nozoe Mari
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Nguyen Vinh P.
Reed Smith LLP
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