Wafer heating apparatus and with ceramic substrate and dielectri

Details Wafer heating apparatus and with ceramic substrate and dielectri Wafer heating apparatus and with ceramic substrate and dielectri

1991-12-23

1994-01-18

Reynolds, Bruce A.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

118725, 361234, H05B 320

Patent

active

052801560

ABSTRACT:
A wafer heating apparatus can be obtained which prevents formation of a local gap caused by deflection or distortion, and the like, of a wafer at the time of heating the wafer so as to improve production yield of the heat treatment of the wafers. The apparatus includes a ceramic substrate, a heat generating resistive element embedded in the ceramic substrate, a film electrode formed on a front surface of the ceramic substrate, and a ceramic dielectric layer formed on the front surface of the ceramic substrate to coat the film electrode. A direct current power source is provided to generate Coulomb's force between the wafer and the film electrode via the dielectric layer to attract the wafer to a wafer-attracting surface of the dielectric layer, while heating the wafer attracted to the wafer-attracting surface by energizing the heat generating element through application of an electric current therethrough. A method of producing the wafer heating apparatus is also disclosed.

REFERENCES:
patent: 4502094 (1985-02-01), Lewin et al.
patent: 4561006 (1985-12-01), Currie
patent: 4645218 (1987-02-01), Ooshio et al.
patent: 4665463 (1987-05-01), Ward et al.
patent: 4771730 (1988-09-01), Tezuka
patent: 4962441 (1990-10-01), Collins
patent: 5231690 (1993-07-01), Soma et al.
"Improved Guard Plate", Research Disclosure, Apr. 1992, No. 336, Kenneth Moison Pubs. Ltd., England.

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