Wafer flood polishing

Details Wafer flood polishing Wafer flood polishing

1988-10-28

1990-03-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437225, 437228, 156636, 156637, 51 90, H01L 21304

Patent

active

049101552

ABSTRACT:
In a chem-mech polishing process for planarizing insulators such as silicon oxide and silicon nitride, a pool of slurry is utilized at a temperature between 85.degree. F.-95.degree. F. The slurry particulates (e.g. silica) have a hardness commensurate to the hardness of the insulator to be polished. Under these conditions, wafers can be polished at a high degree of uniformity more economically (by increasing pad lifetime), without introducing areas of locally incomplete polishing.

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J. B. Brinton, "Spinning Etchant Polishes Flat, Fast", Electronics, Jan. 13, 1982, vol. 55, No. 1, pp. 40-41.
Y. Namba et al., "Ultrafine Finishing of Ceramics and Metals by Float Polishing", Laser Induced Damage in Optical Materials: 1980, Proceedings of a Symposium (NBS-SP-620) Boulder, Colo., 30 Sep.-1 Oct. 1980, pp. 171-179.

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