Wafer fabrication by implanting through protective layer

Details Wafer fabrication by implanting through protective layer Wafer fabrication by implanting through protective layer

1983-07-05

1985-02-12

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29576W, 29578, 29580, 148 15, 148175, 148187, 156643, 156653, 156657, 1566591, 357 49, 357 50, 357 91, 357 34, H01L 21265, H01L 21318

Patent

active

044982275

ABSTRACT:
Manufacture of bipolar substantially isoplanar integrated circuit structures is accomplished by rearrangement of the conventional masking steps and by the substitution and full integration of implanting methods for diffusion methods. A uniform nitride layer is deposited over the basic structure of epitaxial islands separated by isolation oxide regions thereby passivating and protecting the isolation oxide regions, epitaxial oxide buffer layer and epitaxial layer from environmental contaminants. The nitride layer which forms part of a composite protective layer is maintained in place throughout a major portion of the fully integrated sequential implanting steps during which the collector sink, base and emitter regions are introduced into the epitaxial islands. At least a portion of the composite protective layer is a barrier to environmental contaminants throughout the process. The overall number of steps is reduced, etching steps minimized, and overall reliability of the structure improved. The process also includes field implanting of phosphorus in the isolation oxide for continuous gettering of ionic contaminants.

REFERENCES:
patent: 4111724 (1978-09-01), Ogive et al.
patent: 4199380 (1980-04-01), Farrell et al.
patent: 4261763 (1981-04-01), Kumar et al.
patent: 4408387 (1983-10-01), Kiriseko
patent: 4412378 (1983-11-01), Shinada
patent: 4433471 (1984-02-01), Ko et al.
patent: 4440580 (1984-04-01), Gahle
Okada et al., "New Polysilicon Process . . . PSA Technology" Trans. on Electron Devices (IEEE), vol. Ed-26, No. 4, Apr. 1979, pp. 385-389.

Affiliated with

Also associated with

Rating

Wafer fabrication by implanting through protective layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer fabrication by implanting through protective layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer fabrication by implanting through protective layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1382531