Semiconductor device manufacturing: process – With measuring or testing
Patent
1995-12-18
1997-04-08
Powell, William
Semiconductor device manufacturing: process
With measuring or testing
438703, 438761, H01L 2100
Patent
active
056183801
ABSTRACT:
A method and process for reducing edge-related defects. The present invention comprises the steps of calibrating multiple process units such that the multiple process units are equally referenced with respect to an edge of a semiconductor wafer. The calibrated multiple process units are then utilized to precisely control respective termination distances of deposited substrate layers with respect to the edge of the semiconductor wafer. Furthermore, the deposited substrate layers are selectively stacked in manner which prevents semiconductor wafer edge-related defects. In so doing, the present claimed invention increases semiconductor device yields.
REFERENCES:
Hause et al., "Yield Improvement by Wafer Edge Engineering", SPIE vol. 2635, at 22-29, Aug. 1995.
Galloway Judy U.
Lantz Clayton
Siems Daniel D.
Powell William
VLSI Technology Inc.
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