Wafer dividing method

Details Wafer dividing method Wafer dividing method

2006-06-01

2008-12-30

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S462000, C257S620000

Reexamination Certificate

active

07470566

ABSTRACT:
A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.

REFERENCES:
patent: 2005/0277270 (2005-12-01), Yoshikawa et al.
patent: 2006/0255431 (2006-11-01), Sekiya
patent: 2007/0066044 (2007-03-01), Abe et al.
patent: 10-305420 (1998-11-01), None
patent: 3408805 (2003-03-01), None

Affiliated with

Also associated with

Rating

Wafer dividing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer dividing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer dividing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4039167