Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2007-06-04
2010-06-15
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
C438S460000, C438S462000, C257SE21596
Reexamination Certificate
active
07737002
ABSTRACT:
A method of dividing a wafer having a plurality of areas defined by the plurality of streets formed in a lattice on the front surface, devices formed in the defined areas and an adhesive film for die bonding on the rear surface and put on a dicing tape affixed to an annular frame along the streets, the method comprising the steps of:forming a groove along the streets in the wafer by applying a first laser beam whose elliptic focal spot has a ratio of the long axis of the short axis of 15 to 20:1 along the streets formed on the wafer; anddividing the adhesive film along the grooves by applying a second laser beam whose elliptical focal spot has a ratio of the long axis to the short axis of 60 to 70:1 to the adhesive film through the grooves formed by the wafer dividing step.
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Disco Corporation
Nguyen Duy T
Pham Thanh V
Smith , Gambrell & Russell, LLP
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