Wafer dividing method

Details Wafer dividing method Wafer dividing method

2006-06-22

2009-06-09

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S060000, C438S075000, C438S014000, C257SE21596, C257SE21598, C257SE21599

Reexamination Certificate

active

07544589

ABSTRACT:
A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface and test metal patterns which are formed on the streets, having a metal pattern breaking step for forming a break line in the test metal patterns by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set near the test metal patterns; a deteriorated layer forming step for forming a deteriorated layer along the streets above the break lines in the inside of the wafer by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position above the break lines in the inside of the wafer; and a dividing step.

REFERENCES:
patent: 7446020 (2008-11-01), Nakamura
patent: 2005/0009301 (2005-01-01), Nagai et al.
patent: 2008/0057680 (2008-03-01), Watanabe
patent: 2008/0124898 (2008-05-01), Kobayashi
patent: 3408805 (2003-03-01), None

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