Wafer dividing method

Details Wafer dividing method Wafer dividing method

2005-05-13

2009-06-23

Alie, Ghassem (Department: 3724)

Severing by tearing or breaking

Methods

With preliminary weakening

C438S015000, C438S113000, C438S460000, C438S463000, C219S121670, C219S121720

Reexamination Certificate

active

07549560

ABSTRACT:
A method of dividing a wafer along a plurality of first dividing lines and a plurality of second dividing lines intersecting with the first dividing lines on the surface of the wafer. The method includes an internal deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer along both the first dividing lines and the second dividing lines by applying a laser beam along the first dividing lines and the second dividing lines. It also includes an intersection deteriorated layer forming step for forming a deteriorated layer thicker than the deteriorated layer formed in the internal deteriorated layer forming step by applying a laser beam to intersection areas between the first and second dividing lines. Thereafter, a dividing step divides the wafer into individual chips along the first and second dividing lines by exertion of external force to the wafer.

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