Wafer cooling and temperature control for a plasma etching syste

Details Wafer cooling and temperature control for a plasma etching syste Wafer cooling and temperature control for a plasma etching syste

1985-08-07

1986-10-07

Kellogg, Arthur

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156626, 156643, 20419232, 204298, B44C 122, C03C 1500

Patent

active

046157557

ABSTRACT:
Pressurized gas is applied between a wafer and electrode in a plasma etching system. Gas between the wafer and electrode provides cooling of the wafer. A control arrangement maintains the gas at a predetermined pressure.

REFERENCES:
patent: 4565601 (1986-01-01), Kakehi et al.

Affiliated with

Also associated with

Rating

Wafer cooling and temperature control for a plasma etching syste does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wafer cooling and temperature control for a plasma etching syste, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wafer cooling and temperature control for a plasma etching syste will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-641547