Wafer cleaning with dissolved gas concentration control

Details Wafer cleaning with dissolved gas concentration control Wafer cleaning with dissolved gas concentration control

1998-01-08

2000-03-21

Gulakowski, Randy

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 254, 134 56R, 134184, 134902, B08B 600

Patent

active

060390557

ABSTRACT:
The improved methods and apparatus for cleaning semiconductor wafers and other planar substrates using megasonic cleaning are characterized by the use of monitoring of gas content (i) the liquid flowing to the megasonic cleaning environment, (ii) the liquid in the megasonic cleaning environment, and/or (iii) liquid leaving the megasonic cleaning environment. The methods use information obtained from directly monitoring of the gas content to control the supply of gas-containing liquid to the wafer-cleaning environment to achieve improved cleaning performance on the application of megasonic energy to the cleaning liquid. The gas content information may be used to control the supply of gas containing liquid in real time or may be used to pre-program the controller to achieve a desired gas content in the cleaning bath liquid.

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