Wafer cleaning method and resulting wafer

Details Wafer cleaning method and resulting wafer Wafer cleaning method and resulting wafer

2006-04-04

2006-04-04

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

C257S283000

Reexamination Certificate

active

07023099

ABSTRACT:
A method of removing organic particles from a registration mark on a semiconductor wafer. The method comprises providing a semiconductor wafer comprising at least one registration mark at least partially filled with organic particles. The at least one registration mark has a trench width from approximately 1.0 μm to approximately 3.0 μm. The semiconductor wafer is exposed to a cleaning solution comprising tetramethylammonium hydroxide and at least one surfactant, such as an acetylenic diol surfactant. The semiconductor wafer is exposed to an ultrasonic or megasonic vibrational energy. A semiconductor wafer previously subjected to a chemical mechanical planarization treatment and having a reduced amount of organic particles in a registration mark is also disclosed.

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Statement of Material Information , 1 page.

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