Wafer chuck

Metal working – Plural diverse manufacturing apparatus including means for... – Common reciprocating support for spaced tools

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51235, 118 50, 269 21, 279 3, 165 805, F28F 1300

Patent

active

046034668

ABSTRACT:
The wafer chuck disclosed herein is adapted to hold a semiconductor wafer during high energy treatment in a vacuum environment. The wafer is clamped by its rim to a circular domed plate so as to distort the wafer into close proximity with the domed face of the plate. Ports are provided in the face of the plate for introducing a mobile gas under controlled pressure to the interstitial space between the wafer and the domed face of the plate. An annular groove is provided around the periphery of the domed face and this groove is connected to a vacuum pumping means thereby to minimize leakage of the mobile gas into the vacuum environment.

REFERENCES:
patent: 3566960 (1971-03-01), Stuart
patent: 4261762 (1981-04-01), King
patent: 4282924 (1981-08-01), Faretra
patent: 4457359 (1984-07-01), Holden
patent: 4508161 (1985-04-01), Holden
patent: 4512391 (1985-04-01), Harra
Hammer, "Cooling Ion-Implantation Target", IBM Technical Disclosure Bulletin, 19, 6, (1976).
Carbone et al., "Ultra-High Vacuum Evaporation/Sputtering Apparatus for Cryogenic Thin Film Technology", IBM Tech. Disclosure Bulletin, 22, 2 (1979).
Egerton et al., "Positive Wafer Temperature Control to Increase Dry Etch Throughput and Yield" Solid State Tech., Aug. (1982).
"Plasma/Rie Etcher" Ionics, 1982.

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