Wafer characteristics via reflectometry and wafer processing...

Details Wafer characteristics via reflectometry and wafer processing... Wafer characteristics via reflectometry and wafer processing...

2007-07-03

2007-07-03

Evans, Geoffrey S. (Department: 1725)

Electric heating

Metal heating

By arc

C219S121720, C219S121830, C219S121860, C356S446000, C438S463000

Reexamination Certificate

active

10547579

ABSTRACT:
An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.

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