Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Reexamination Certificate
2007-12-11
2007-12-11
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
C438S455000, C438S457000, C438S458000, C438S459000, C257SE21480, C257SE21519, C257SE21657
Reexamination Certificate
active
10883614
ABSTRACT:
The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts.The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.
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(http://microlab.eecs.berkeley.edu/labmanual/chap9/9.2.html, N. Chen, REV. Mar. 2, 2003).
Kobrinsky Mauro J.
List Scott (Richard)
Ramanathan Shriram
Chen George
Stark Jarrett J
Toledo Fernando L.
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