Wafer bonding using trapped oxidizing vapor

Details Wafer bonding using trapped oxidizing vapor Wafer bonding using trapped oxidizing vapor

1993-10-14

1994-08-02

Weston, Caleb

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

148DIG135, 437 62, 437 86, B32B 3124

Patent

active

053342739

ABSTRACT:
A bonding method including pressing a pair of slices together with a liquid oxidant therebetween and subjecting the pair of slices to a temperature to bond the slices together. Preferably a liquid oxidant is applied to one of the slices before they are pressed together and then dried. The heating step for bonding is carried out at a sufficiently high temperature of at least 1100.degree. C. to make the slices pliable so as to comply with each other during the bonding step.

REFERENCES:
patent: 2974075 (1961-03-01), Miller
patent: 3239908 (1966-03-01), Makamura
patent: 3689357 (1972-09-01), Jordan
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4738935 (1988-04-01), Shimbo et al.
patent: 4854986 (1989-08-01), Rabey
patent: 4883215 (1989-11-01), Geosele et al.
patent: 4962062 (1990-10-01), Uchiyama et al.
patent: 5131968 (1992-07-01), Wells et al.
patent: 5266135 (1993-11-01), Short et al.
"Silicon-to-Silicon direct bonding method" Shimbo et al, J. Appl. Phys. 60, Oct. 15, 1986, pp. 2987 & 2988.

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