Wafer bonding method

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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Details

C257SE21518, C257SE21519

Reexamination Certificate

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07371661

ABSTRACT:
A wafer bonding method, comprising steps of: coating a medium layer respectively on the surfaces of two wafers; removing impurities formed on the surface of each medium layer; laminating the two wafers while enabling the surface coated with the medium layer of one of the two wafers to face the surface coated with the medium layer of another wafer; and applying an ultra-sonic oscillation and a bonding pressure upon the laminated wafers for bonding the two wafers.

REFERENCES:
patent: 6593211 (2003-07-01), Sato

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