Wafer bonding for power devices

Details Wafer bonding for power devices Wafer bonding for power devices

1994-09-07

1997-08-05

Niebling, John

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

438456, 438459, 438464, 438977, 438421, H01L 2120, H01L 21302, H01L 21304, H01L 21463

Patent

active

056542267

ABSTRACT:
A method of processing wafers for power devices in which the wafer has a desired thickness less than the thickness necessary to provide mechanical support. A silicon wafer of the desired thickness is bonded to a carrier wafer until most, if not all, of the processing steps are completed, after which the silicon wafer is separated from its carrier wafer. The carrier wafer may serve as a diffusion source, and the areas of the bonding of the silicon wafer to the carrier wafer may be selected consistent with the devices or groups of devices to be formed by the separation of the two wafers. The carrier wafer may by bonded to the device wafer over nearly the full surface area and the carrier wafer remain a part of the final device.

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patent: 5169472 (1992-12-01), Goebel
patent: 5183769 (1993-02-01), Rutter et al.
patent: 5385632 (1995-01-01), Goossen

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