Wafer bonded MOS decoupling capacitor

Details Wafer bonded MOS decoupling capacitor Wafer bonded MOS decoupling capacitor

2006-06-20

2006-06-20

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S393000, C438S250000, C438S239000

Reexamination Certificate

active

07064043

ABSTRACT:
A technique for forming a MOS capacitor (100) that can be utilized as a decoupling capacitor is disclosed. The MOS capacitor (100) is formed separately from the particular circuit device (170) that it is to service. As such, the capacitor (100) and its fabrication process can be optimized in terms of efficiency, etc. The capacitor (100) is fabricated with conductive contacts (162) that allow it to be fused to the device (170) via conductive pads (172) of the device (170). As such, the capacitor (100) and device (170) can be packaged together and valuable semiconductor real estate can be conserved as the capacitor (100) is not formed out of the same substrate as the device (170). The capacitor (100) further includes deep contacts (150, 152) whereon bond pads (180, 182) can be formed that allow electrical connection of the capacitor (100) and device (170) to the outside world.

REFERENCES:
patent: 5640049 (1997-06-01), Rostoker et al.
patent: 6222246 (2001-04-01), Mak et al.
patent: 6806568 (2004-10-01), Schaper
patent: 6838332 (2005-01-01), Sanchez et al.
patent: 2002/0094629 (2002-07-01), Belleville et al.
patent: 2004/0195694 (2004-10-01), Duncombe et al.

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