Wafer base for silicon carbide semiconductor devices, incorporat

Details Wafer base for silicon carbide semiconductor devices, incorporat Wafer base for silicon carbide semiconductor devices, incorporat

1991-08-08

1993-03-02

Kunemund, Robert

Fishing, trapping, and vermin destroying

156DIG64, 156DIG87, 156DIG95, 437902, 437915, H02L 2120

Patent

active

051908905

ABSTRACT:
A semiconductor wafer base is disclosed which is suitable for fabrication of devices in silicon carbide, comprising a single crystal substrate which is a transition metal carbide alloy having cubic crystal structure and an unpolytyped, single crystal 3C-silicon carbide overlay epitaxially related to the substrate. Preferably, the substrate is an alloy of two or more of titanium carbide, tantalum carbide, vanadium carbide, and niobium carbide, with lattice parameter differing from 3C-silicon carbide by less than about 1%. Use of the transition metal carbide alloys enables the preparation of large, single crystal substrates free from cracks, dislocations, or other defects, suitable for epitaxial deposition of 3C-silicon carbide. The 3C-silicon carbide epitaxial overlay may be deposited by any suitable technique, including chemical vapor deposition and reactive evaporation, and may be doped with n- or p-type dopants. The 3C-silicon carbide is useful for fabricating semiconductor devices for use at high temperatures, high powers, and in corrosive environments.

REFERENCES:
patent: 3661599 (1972-05-01), Hollox et al.
patent: 4568795 (1986-02-01), Wood
patent: 4616672 (1986-09-01), Addamiano
patent: 4697202 (1987-09-01), Sher
patent: 4738937 (1988-04-01), Parsons
patent: 4767666 (1988-08-01), Bunshah et al.
patent: 4916088 (1990-04-01), Mooney et al.
patent: 4923716 (1990-05-01), Brown et al.
patent: 5010035 (1991-04-01), Bunshah et al.
patent: 5030583 (1991-07-01), Beetz, Jr.
patent: 5043773 (1991-08-01), Precht et al.
"Critical Evaluation of the Status of the Areas of Future Research Regarding the Wide Band Gap Semiconductors Diamond, Gallium, Nitride and Silicon Carbides" Davis et al., Materials Science and Eng. B1 (1988), pp. 77-104.
"Microwave and Millimeter wave power generation in silicon carbide avalanche devices," Mendi, Haddad and Mains, J. Appl. Phys. 64, 1533 (1988).
Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type B-SiC grown via chemical vapor deposition, H. S. Kong et al. Appl. Phys. Lett. 51, 442 (1987).
A floating zone technique for the growth of carbide single crystals, Precht, W. Hollox, G. E., Technical Report 68-9c, NTIS order No. AD 671 639 (Date Unkown).
"Synthesis and study of epitaxial layers of (SiC).sub.1-x (AIN) .sub.x wide-gap solid solutions." Nurmagomedov, et al. Sov. Tech. Phys. Lett. 12(9) p. 431 (1987).
CRC Handbook, 63rd Edition, pp. D-40 through D-44 (Date Unkown).

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