Wafer base for silicon carbide semiconductor device

Details Wafer base for silicon carbide semiconductor device Wafer base for silicon carbide semiconductor device

1985-05-23

1988-08-30

McCamish, Marion C.

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

428446, 428698, 428700, B32B 702, B32B 1504

Patent

active

047676663

ABSTRACT:
A semiconductor device wafer base wherein devices may be fabricated in silicon carbide, the base having a compatible substrate and a beta silicon carbide overlay layer epitaxially related to the substrate, the beta silicon carbide layer being unpolytyped, single crystal, uncracked, without twins, and having integrated circuit quality surface morphology. Preferably, the substrate is a single crystal of titanium carbide, which is the same cubic lattice-type as beta silicon carbide with a lattice parameter different from that of beta silicon carbide by less than about 1%. Additionally, the thermal expansion coefficients of beta silicon carbide and titanium carbide are nearly the same, minimizing the creation of thermal stresses during cooling and heating. The beta silicon carbide is useful in fabricating semiconductor devices for use at much higher temperatures than is silicon, and for use at high power levels, at high frequencies, and in radiation hardened applications. The device base may be fabricated by any suitable technique, including reactive deposition and chemical vapor deposition.

REFERENCES:
patent: 4525415 (1985-06-01), Porat

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