Wafer base for silicon carbide semiconductor device

Details Wafer base for silicon carbide semiconductor device Wafer base for silicon carbide semiconductor device

1988-05-13

1991-04-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156DIG75, 156DIG64, 427249, 4272551, 4272552, 148DIG148, H01L 2120

Patent

active

050100351

ABSTRACT:
A semiconductor device wafer base wherein devices may be fabricated in silicon carbide, the base having a compatible substrate and a beta silicon carbide overlay layer epitaxially related to the substrate, the beta silicon carbide layer being unpolytyped, single crystal, uncracked, without twins, and having integrated circuit quality surface morphology. Preferably, the substrate is a single crystal of titanium carbide, which is the same cubic lattice-type as beta silicon carbide with a lattice parameter different from that of beta silicon carbide by less than about 1%. Additionally, the thermal expansion coefficients of beta silicon carbide and titanium carbide are nearly the same, minimizing the creation of thermal stresses during cooling and heating. The beta silicon carbide is useful in fabricating semi-conductor devices for use at much higher temperatures than is silicon, and for use at high power levels, at high frequencies, and in radiation hardened applications. The device base may be fabricated by any suitable technique, including reactive deposition and chemical vapor deposition.

REFERENCES:
patent: 4923716 (1990-05-01), Brown et al.
Parsons et al., "Single Crystal Epitaxial Growth of Beta-SiC for Device and Integrated Circuit Applications", in Novel Refractory Semiconductors Symposium; Emin, D.; Aselage, T. L.; and Wood, C., eds., Mater. Res. Soc., 1987, pp. 271-282.
Koba et al., "Scaleable Process for CVD of Large-Area Heteroepitaxial Beta-Silicon Carbide on Titanium Carbide (TiC.sub.x) Using Gases with 1:1 Silicon to Carbon Stoichiometry", Report, DMI-TR-89001, Order No. AD-A204184, 1989, NTIS.
Bellina et al., "Thermally Activated Reactions of Titanium Thin Films with (100) 3C-Silicon Carbide Substrates", in Novel Refractory Semiconductors Symposium; Emin, D.; Aselage, T. L.; and Wood, C., eds., vol. 97, Mater. Res. Soc., 1987, pp. 265-270.
Parsons et al., "Unlocking the Potential of Beta Silicon Carbide", Solid State Technology, vol. 28, No. 11, pp. 133-139.

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