Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2007-04-03
2007-04-03
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C438S462000, C257SE21484, C257SE21705
Reexamination Certificate
active
10925525
ABSTRACT:
A method used to form a semiconductor device comprises processing a semiconductor wafer to include one or more vias or through-holes only partially etched into the wafer, and scribe marks only partially etched into the wafer which define a plurality of semiconductor devices. Wafer material is removed from the back of the wafer to the level of the vias and scribe marks to form a via opening through the wafer while simultaneously dicing the wafer into individual semiconductor dice.
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“Toshiba Develops Paper-Thin Package”, Yoshihiko Hara, EE Times, Jun. 2, 1999.
Coleman W. David
Martin Kevin D.
Micro)n Technology, Inc.
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